Analysis of bulk negative capacitance field effect transistor

Analysis of bulk negative capacitance field effect transistor

This thesis report is submitted in partial fulfilment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2017.

Xehetasun bibliografikoak
Egile Nagusiak: Rahman, Towfiqur, Khan, Antara Fairooz, Nawal, Nowshin
Beste egile batzuk: Noor, Samantha Lubaba
Formatua: Thesis
Hizkuntza:English
Argitaratua: BRAC University 2017
Gaiak:
NCFET
MOSFET structure
Transistor
Shockley-Read
Lombardi CVT
TCAD model
Sarrera elektronikoa:http://hdl.handle.net/10361/8625

Internet

http://hdl.handle.net/10361/8625

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