Analysis of bulk negative capacitance field effect transistor

Analysis of bulk negative capacitance field effect transistor

This thesis report is submitted in partial fulfilment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2017.

Bibliografske podrobnosti
Main Authors:	Rahman, Towfiqur, Khan, Antara Fairooz, Nawal, Nowshin
Drugi avtorji:	Noor, Samantha Lubaba
Format:	Thesis
Jezik:	English
Izdano:	BRAC University 2017
Teme:	NCFET MOSFET structure Transistor Shockley-Read Lombardi CVT TCAD model
Online dostop:	http://hdl.handle.net/10361/8625

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