Analysis of bulk negative capacitance field effect transistor

Analysis of bulk negative capacitance field effect transistor

This thesis report is submitted in partial fulfilment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2017.

Detalles Bibliográficos
Autores principales: Rahman, Towfiqur, Khan, Antara Fairooz, Nawal, Nowshin
Otros Autores: Noor, Samantha Lubaba
Formato: Tesis
Lenguaje:English
Publicado: BRAC University 2017
Materias:
NCFET
MOSFET structure
Transistor
Shockley-Read
Lombardi CVT
TCAD model
Acceso en línea:http://hdl.handle.net/10361/8625

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