Analysis of bulk negative capacitance field effect transistor

Analysis of bulk negative capacitance field effect transistor

This thesis report is submitted in partial fulfilment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2017.

Bibliografiska uppgifter
Huvudupphovsmän: Rahman, Towfiqur, Khan, Antara Fairooz, Nawal, Nowshin
Övriga upphovsmän: Noor, Samantha Lubaba
Materialtyp: Lärdomsprov
Språk:English
Publicerad: BRAC University 2017
Ämnen:
NCFET
MOSFET structure
Transistor
Shockley-Read
Lombardi CVT
TCAD model
Länkar:http://hdl.handle.net/10361/8625

Internet

http://hdl.handle.net/10361/8625

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