Analysis of bulk negative capacitance field effect transistor
This thesis report is submitted in partial fulfilment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2017.
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| Ngôn ngữ: | English |
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BRAC University
2017
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| Truy cập trực tuyến: | http://hdl.handle.net/10361/8625 |
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10361-86252019-09-30T03:06:35Z Analysis of bulk negative capacitance field effect transistor Rahman, Towfiqur Khan, Antara Fairooz Nawal, Nowshin Noor, Samantha Lubaba Department of Electrical and Electronic Engineering, BRAC University NCFET MOSFET structure Transistor Shockley-Read Lombardi CVT TCAD model This thesis report is submitted in partial fulfilment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2017. Cataloged from PDF version of thesis. Includes bibliographical references (page 69-72). In this work, a comprehensive analysis of bulk Negative Capacitance Field Effect (NCFET) transistor has been done. The objective of the paper is to show if a ferroelectric insulator is introduced in MOSFET structure, it should be possible to obtain a value of sub-threshold slope (SS) lower than 60mV/decade that puts a fundamental lower limit on the operating voltage and hence the power dissipation in standard FET based switches. Si doped HfO2 has been used as the ferroelectric material of NCFET. Polarization, energy distribution, dielectric constant, anisotropy constant variation of the Ferroelectric material has been analyzed. Condition to avoid hysteresis effect of the ferroelectric has been indicated. A numerical model of the device has been developed in Silvaco, ATLAS which included Fermi-Dirac Carrier Statistics, Shockley-Read Model, and Lombardi CVT models. Charge distribution of baseline MOSFET has been extracted from TCAD model and incorporated in 1-D Landau model to find the voltage drop across ferroelectric material. Ultimately device transfer characteristics with and without ferroelectric layer has been compared. Due to the use of FE layer, relative improvement in the device performance (especially in SS region) is observed compared to the conventional MOSFET device. Towfiqur Rahman Antara Fairooz Khan Nowshin Nawal B. Electrical and Electronic Engineering 2017-12-18T11:10:53Z 2017-12-18T11:10:53Z 2017 2017 Thesis ID 14121033 ID 13221034 ID 13121163 http://hdl.handle.net/10361/8625 en BRAC University thesis is protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. 72 pages application/pdf BRAC University |
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Brac University |
| collection |
Institutional Repository |
| language |
English |
| topic |
NCFET MOSFET structure Transistor Shockley-Read Lombardi CVT TCAD model |
| spellingShingle |
NCFET MOSFET structure Transistor Shockley-Read Lombardi CVT TCAD model Rahman, Towfiqur Khan, Antara Fairooz Nawal, Nowshin Analysis of bulk negative capacitance field effect transistor |
| description |
This thesis report is submitted in partial fulfilment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2017. |
| author2 |
Noor, Samantha Lubaba |
| author_facet |
Noor, Samantha Lubaba Rahman, Towfiqur Khan, Antara Fairooz Nawal, Nowshin |
| format |
Thesis |
| author |
Rahman, Towfiqur Khan, Antara Fairooz Nawal, Nowshin |
| author_sort |
Rahman, Towfiqur |
| title |
Analysis of bulk negative capacitance field effect transistor |
| title_short |
Analysis of bulk negative capacitance field effect transistor |
| title_full |
Analysis of bulk negative capacitance field effect transistor |
| title_fullStr |
Analysis of bulk negative capacitance field effect transistor |
| title_full_unstemmed |
Analysis of bulk negative capacitance field effect transistor |
| title_sort |
analysis of bulk negative capacitance field effect transistor |
| publisher |
BRAC University |
| publishDate |
2017 |
| url |
http://hdl.handle.net/10361/8625 |
| work_keys_str_mv |
AT rahmantowfiqur analysisofbulknegativecapacitancefieldeffecttransistor AT khanantarafairooz analysisofbulknegativecapacitancefieldeffecttransistor AT nawalnowshin analysisofbulknegativecapacitancefieldeffecttransistor |
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1814307702799597568 |