Transient switch-on collector current analysis in punch-through IGBT
This thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2017.
| मुख्य लेखकों: | Islam, Md. Akhirul, Hossain, MD. Nazmul, Altab, M. Mubaswir, Bhowmik, Tonmoy |
|---|---|
| अन्य लेखक: | Das, Avijit |
| स्वरूप: | थीसिस |
| भाषा: | English |
| प्रकाशित: |
BRAC Univeristy
2017
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| विषय: | |
| ऑनलाइन पहुंच: | http://hdl.handle.net/10361/8419 |
समान संसाधन
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Investigation into IGBT transient characteristics and calculation of switching power loss
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Temperature dependence of the transient characteristics in NPT IGBT using linear and parabolic model
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An extended model for a punch through (PT) insulated gate bipolar transistor (IGBT) and its transient characteristics
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Transient anode voltage modeling of IGBT and its carrier lifetime dependence
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प्रकाशित: (2018) -
Transient anode voltage modeling of IGBT and its base doping profile investigation
द्वारा: Das, Avijit, और अन्य
प्रकाशित: (2016)