Transient switch-on collector current analysis in punch-through IGBT

Transient switch-on collector current analysis in punch-through IGBT

This thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2017.

Detalles Bibliográficos
Autores principales: Islam, Md. Akhirul, Hossain, MD. Nazmul, Altab, M. Mubaswir, Bhowmik, Tonmoy
Otros Autores: Das, Avijit
Formato: Tesis
Lenguaje:English
Publicado: BRAC Univeristy 2017
Materias:
IGBT
Hefner model
Acceso en línea:http://hdl.handle.net/10361/8419
id 10361-8419
record_format dspace
spelling 10361-84192019-09-30T03:23:07Z Transient switch-on collector current analysis in punch-through IGBT Islam, Md. Akhirul Hossain, MD. Nazmul Altab, M. Mubaswir Bhowmik, Tonmoy Das, Avijit Department of Electrical and Electronic Engineering, BRAC University IGBT Hefner model This thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2017. Cataloged from PDF version of thesis. Analysis of switching power loss of IGBT is considered desirable. In our thesis, the switch on behavior is analyzed through investigation into transient anode collector current of Punch Through (PT) Insulated Gate Bipolar Transistor (IGBT). Changing the Doping concentration, gate voltage and collector to emitter voltage along with different temperature in punch through IGBT we compared different collector currents. Md. Akhirul Islam MD. Nazmul Hossain M. Mubaswir Altab Tonmoy Bhowmik B. Electrical and Electronic Engineering 2017-08-21T07:43:45Z 2017-08-21T07:43:45Z 2017 2017 Thesis ID 12121114 ID 12321066 ID 12321067 ID 12321068 http://hdl.handle.net/10361/8419 en BRAC University thesis is protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. 85 pages application/pdf BRAC Univeristy
institution Brac University
collection Institutional Repository
language English
topic IGBT
Hefner model
spellingShingle IGBT
Hefner model
Islam, Md. Akhirul
Hossain, MD. Nazmul
Altab, M. Mubaswir
Bhowmik, Tonmoy
Transient switch-on collector current analysis in punch-through IGBT
description This thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2017.
author2 Das, Avijit
author_facet Das, Avijit
Islam, Md. Akhirul
Hossain, MD. Nazmul
Altab, M. Mubaswir
Bhowmik, Tonmoy
format Thesis
author Islam, Md. Akhirul
Hossain, MD. Nazmul
Altab, M. Mubaswir
Bhowmik, Tonmoy
author_sort Islam, Md. Akhirul
title Transient switch-on collector current analysis in punch-through IGBT
title_short Transient switch-on collector current analysis in punch-through IGBT
title_full Transient switch-on collector current analysis in punch-through IGBT
title_fullStr Transient switch-on collector current analysis in punch-through IGBT
title_full_unstemmed Transient switch-on collector current analysis in punch-through IGBT
title_sort transient switch-on collector current analysis in punch-through igbt
publisher BRAC Univeristy
publishDate 2017
url http://hdl.handle.net/10361/8419
work_keys_str_mv AT islammdakhirul transientswitchoncollectorcurrentanalysisinpunchthroughigbt
AT hossainmdnazmul transientswitchoncollectorcurrentanalysisinpunchthroughigbt
AT altabmmubaswir transientswitchoncollectorcurrentanalysisinpunchthroughigbt
AT bhowmiktonmoy transientswitchoncollectorcurrentanalysisinpunchthroughigbt
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