Investigation into IGBT transient characteristics and calculation of switching power loss
This thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Computer Science and Engineering, 2016.
Κύριοι συγγραφείς: | Hasan, Rifatul, Mustary, Sharmin, Bristy, Nigar Sultana |
---|---|
Άλλοι συγγραφείς: | Das, Avijit |
Μορφή: | Thesis |
Γλώσσα: | English |
Έκδοση: |
BRAC University
2017
|
Θέματα: | |
Διαθέσιμο Online: | http://hdl.handle.net/10361/7717 |
Παρόμοια τεκμήρια
-
An extended model for a punch through (PT) insulated gate bipolar transistor (IGBT) and its transient characteristics
ανά: Saif, Omar, κ.ά.
Έκδοση: (2017) -
Temperature dependence of the transient characteristics in NPT IGBT using linear and parabolic model
ανά: Tania, Shoulin, κ.ά.
Έκδοση: (2017) -
Transient switch-on collector current analysis in punch-through IGBT
ανά: Islam, Md. Akhirul, κ.ά.
Έκδοση: (2017) -
Transient anode voltage modeling of IGBT and its base doping profile investigation
ανά: Das, Avijit, κ.ά.
Έκδοση: (2016) -
Purchase order for punch through concrete slab for the condensate drain pipe for each HAHU of the classroom for BracU new campus project
ανά: Brac University
Έκδοση: (2023)