Simulation based electrostatic study of different multigate quantumwell field effect transistors by changing the gate oxide thickness and metal work function

Simulation based electrostatic study of different multigate quantumwell field effect transistors by changing the gate oxide thickness and metal work function

This thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2016.

Detaylı Bibliyografya
Asıl Yazarlar: Afsin, Muntasirul Haque, Kabir, Shahriar, Siddiqui, Aminul Haque
Diğer Yazarlar: Bhuian, Dr.Mohammad Belal Hossain
Materyal Türü: Tez
Dil:English
Baskı/Yayın Bilgisi: BRAC University 2017
Konular:
Quantum Well Field-Effect Transistor (QWFET)
Electrical and electronic engineering
Online Erişim:http://hdl.handle.net/10361/7696

Internet

http://hdl.handle.net/10361/7696

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