Simulation based electrostatic study of different multigate quantumwell field effect transistors by changing the gate oxide thickness and metal work function

This thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2016.

Dettagli Bibliografici
Autori principali: Afsin, Muntasirul Haque, Kabir, Shahriar, Siddiqui, Aminul Haque
Altri autori: Bhuian, Dr.Mohammad Belal Hossain
Natura: Tesi
Lingua:English
Pubblicazione: BRAC University 2017
Soggetti:
Accesso online:http://hdl.handle.net/10361/7696