Simulation based electrostatic study of different multigate quantumwell field effect transistors by changing the gate oxide thickness and metal work function

This thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2016.

Bibliografiset tiedot
Päätekijät: Afsin, Muntasirul Haque, Kabir, Shahriar, Siddiqui, Aminul Haque
Muut tekijät: Bhuian, Dr.Mohammad Belal Hossain
Aineistotyyppi: Opinnäyte
Kieli:English
Julkaistu: BRAC University 2017
Aiheet:
Linkit:http://hdl.handle.net/10361/7696