Simulation based electrostatic study of different multigate quantumwell field effect transistors by changing the gate oxide thickness and metal work function

This thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2016.

Detalles Bibliográficos
Autores principales: Afsin, Muntasirul Haque, Kabir, Shahriar, Siddiqui, Aminul Haque
Otros Autores: Bhuian, Dr.Mohammad Belal Hossain
Formato: Tesis
Lenguaje:English
Publicado: BRAC University 2017
Materias:
Acceso en línea:http://hdl.handle.net/10361/7696