Simulation based electrostatic study of different multigate quantumwell field effect transistors by changing the gate oxide thickness and metal work function

This thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2016.

Detalhes bibliográficos
Principais autores: Afsin, Muntasirul Haque, Kabir, Shahriar, Siddiqui, Aminul Haque
Outros Autores: Bhuian, Dr.Mohammad Belal Hossain
Formato: Tese
Idioma:English
Publicado em: BRAC University 2017
Assuntos:
Acesso em linha:http://hdl.handle.net/10361/7696