Simulation based electrostatic study of different multigate quantumwell field effect transistors by changing the gate oxide thickness and metal work function

This thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2016.

Bibliografiset tiedot
Päätekijät:	Afsin, Muntasirul Haque, Kabir, Shahriar, Siddiqui, Aminul Haque
Muut tekijät:	Bhuian, Dr.Mohammad Belal Hossain
Aineistotyyppi:	Opinnäyte
Kieli:	English
Julkaistu:	BRAC University 2017
Aiheet:	Quantum Well Field-Effect Transistor (QWFET) Electrical and electronic engineering
Linkit:	http://hdl.handle.net/10361/7696

id	10361-7696
record_format	dspace
spelling	10361-76962019-09-30T03:23:36Z Simulation based electrostatic study of different multigate quantumwell field effect transistors by changing the gate oxide thickness and metal work function Afsin, Muntasirul Haque Kabir, Shahriar Siddiqui, Aminul Haque Bhuian, Dr.Mohammad Belal Hossain Department of Electrical and Electronic Engineering, BRAC University Quantum Well Field-Effect Transistor (QWFET) Electrical and electronic engineering This thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2016. Cataloged from PDF version of thesis report. Includes bibliographical references (page 51-52). This paper analyses the C-V characteristics by altering the gate oxide thickness and metal workfunction used in the gate of non-planer, multi-gate InGaAs channel Quantum Well Field-Effect Transistor (QWFET). In this paper, we tried to distinguish the different aspects of modern day transistors which lead us to the conclusion about the upcoming worldwide uses of QWFET in many electronic devices. Simulations were carried out using COMSOL Multiphysics linked with MATLAB simulator by incorporating various electrostatic parameters of different semiconductor materials in suitable domains with suitable boundary conditions. Poisson solver coupled with Schrodinger equation is used to obtain charge density in each point of the channel region of QWFET, and integrating the overall charge density we obtain total charge. In this way, charge accumulated in the channel region is obtained by altering gate voltage and a graph of charge versus gate voltage is obtained, which is further differentiated with respect to gate voltage to obtain graphs of gate capacitance versus gate voltage by changing the above mentioned parameters. Muntasirul Haque Afsin Shahriar Kabir Aminul Haque Siddiqui B. Electrical and Electronic Engineering 2017-01-29T08:32:32Z 2017-01-29T08:32:32Z 2016 2016 Thesis ID 13121146 ID 13121073 ID 13121053 http://hdl.handle.net/10361/7696 en BRAC University thesis are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. 52 pages application/pdf BRAC University
institution	Brac University
collection	Institutional Repository
language	English
topic	Quantum Well Field-Effect Transistor (QWFET) Electrical and electronic engineering
spellingShingle	Quantum Well Field-Effect Transistor (QWFET) Electrical and electronic engineering Afsin, Muntasirul Haque Kabir, Shahriar Siddiqui, Aminul Haque Simulation based electrostatic study of different multigate quantumwell field effect transistors by changing the gate oxide thickness and metal work function
description	This thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2016.
author2	Bhuian, Dr.Mohammad Belal Hossain
author_facet	Bhuian, Dr.Mohammad Belal Hossain Afsin, Muntasirul Haque Kabir, Shahriar Siddiqui, Aminul Haque
format	Thesis
author	Afsin, Muntasirul Haque Kabir, Shahriar Siddiqui, Aminul Haque
author_sort	Afsin, Muntasirul Haque
title	Simulation based electrostatic study of different multigate quantumwell field effect transistors by changing the gate oxide thickness and metal work function
title_short	Simulation based electrostatic study of different multigate quantumwell field effect transistors by changing the gate oxide thickness and metal work function
title_full	Simulation based electrostatic study of different multigate quantumwell field effect transistors by changing the gate oxide thickness and metal work function
title_fullStr	Simulation based electrostatic study of different multigate quantumwell field effect transistors by changing the gate oxide thickness and metal work function
title_full_unstemmed	Simulation based electrostatic study of different multigate quantumwell field effect transistors by changing the gate oxide thickness and metal work function
title_sort	simulation based electrostatic study of different multigate quantumwell field effect transistors by changing the gate oxide thickness and metal work function
publisher	BRAC University
publishDate	2017
url	http://hdl.handle.net/10361/7696
work_keys_str_mv	AT afsinmuntasirulhaque simulationbasedelectrostaticstudyofdifferentmultigatequantumwellfieldeffecttransistorsbychangingthegateoxidethicknessandmetalworkfunction AT kabirshahriar simulationbasedelectrostaticstudyofdifferentmultigatequantumwellfieldeffecttransistorsbychangingthegateoxidethicknessandmetalworkfunction AT siddiquiaminulhaque simulationbasedelectrostaticstudyofdifferentmultigatequantumwellfieldeffecttransistorsbychangingthegateoxidethicknessandmetalworkfunction
_version_	1814309023114067968

Simulation based electrostatic study of different multigate quantumwell field effect transistors by changing the gate oxide thickness and metal work function

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