Afsin, M. H., Kabir, S., Siddiqui, A. H., & Bhuian, D. B. H. (2017). Simulation based electrostatic study of different multigate quantumwell field effect transistors by changing the gate oxide thickness and metal work function. BRAC University.
Trích dẫn kiểu Chicago (xuất bản lần thứ 7)Afsin, Muntasirul Haque, Shahriar Kabir, Aminul Haque Siddiqui, và Dr.Mohammad Belal Hossain Bhuian. Simulation Based Electrostatic Study of Different Multigate Quantumwell Field Effect Transistors by Changing the Gate Oxide Thickness and Metal Work Function. BRAC University, 2017.
Trích dẫn kiểu MLA (xuất bản lần thứ 8)Afsin, Muntasirul Haque, et al. Simulation Based Electrostatic Study of Different Multigate Quantumwell Field Effect Transistors by Changing the Gate Oxide Thickness and Metal Work Function. BRAC University, 2017.