Afsin, M. H., Kabir, S., Siddiqui, A. H., & Bhuian, D. B. H. (2017). Simulation based electrostatic study of different multigate quantumwell field effect transistors by changing the gate oxide thickness and metal work function. BRAC University.
Chicago Style (17. basım) AtıfAfsin, Muntasirul Haque, Shahriar Kabir, Aminul Haque Siddiqui, ve Dr.Mohammad Belal Hossain Bhuian. Simulation Based Electrostatic Study of Different Multigate Quantumwell Field Effect Transistors by Changing the Gate Oxide Thickness and Metal Work Function. BRAC University, 2017.
MLA (8th ed.) AtıfAfsin, Muntasirul Haque, et al. Simulation Based Electrostatic Study of Different Multigate Quantumwell Field Effect Transistors by Changing the Gate Oxide Thickness and Metal Work Function. BRAC University, 2017.