APA (7th ed.) Citation

Afsin, M. H., Kabir, S., Siddiqui, A. H., & Bhuian, D. B. H. (2017). Simulation based electrostatic study of different multigate quantumwell field effect transistors by changing the gate oxide thickness and metal work function. BRAC University.

Chicago Style (17th ed.) Citation

Afsin, Muntasirul Haque, Shahriar Kabir, Aminul Haque Siddiqui, and Dr.Mohammad Belal Hossain Bhuian. Simulation Based Electrostatic Study of Different Multigate Quantumwell Field Effect Transistors by Changing the Gate Oxide Thickness and Metal Work Function. BRAC University, 2017.

MLA (8th ed.) Citation

Afsin, Muntasirul Haque, et al. Simulation Based Electrostatic Study of Different Multigate Quantumwell Field Effect Transistors by Changing the Gate Oxide Thickness and Metal Work Function. BRAC University, 2017.