Afsin, M. H., Kabir, S., Siddiqui, A. H., & Bhuian, D. B. H. (2017). Simulation based electrostatic study of different multigate quantumwell field effect transistors by changing the gate oxide thickness and metal work function. BRAC University.
Dyfyniad Arddull ChicagoAfsin, Muntasirul Haque, Shahriar Kabir, Aminul Haque Siddiqui, and Dr.Mohammad Belal Hossain Bhuian. Simulation Based Electrostatic Study of Different Multigate Quantumwell Field Effect Transistors by Changing the Gate Oxide Thickness and Metal Work Function. BRAC University, 2017.
Dyfyniad MLAAfsin, Muntasirul Haque, et al. Simulation Based Electrostatic Study of Different Multigate Quantumwell Field Effect Transistors by Changing the Gate Oxide Thickness and Metal Work Function. BRAC University, 2017.