Afsin, M. H., Kabir, S., Siddiqui, A. H., & Bhuian, D. B. H. (2017). Simulation based electrostatic study of different multigate quantumwell field effect transistors by changing the gate oxide thickness and metal work function. BRAC University.
Citazione stile Chigago Style (17a edizione)Afsin, Muntasirul Haque, Shahriar Kabir, Aminul Haque Siddiqui, e Dr.Mohammad Belal Hossain Bhuian. Simulation Based Electrostatic Study of Different Multigate Quantumwell Field Effect Transistors by Changing the Gate Oxide Thickness and Metal Work Function. BRAC University, 2017.
Citatione MLA (8a ed.)Afsin, Muntasirul Haque, et al. Simulation Based Electrostatic Study of Different Multigate Quantumwell Field Effect Transistors by Changing the Gate Oxide Thickness and Metal Work Function. BRAC University, 2017.