Investigation of CNTFET performance with gate control coefficient effect

Dades bibliogràfiques
Autors principals:	Khan, Sabbir Ahmed, Hasan, Md. Rakibul, Mominuzzaman, Sharif Mohammad
Altres autors:	Department of Computer Science and Engineering, BRAC University
Format:	Article
Idioma:	English
Publicat:	© 2014 Sumy State University 2017
Matèries:	CNTFET Drain current Gate control coefficient Transconductance
Accés en línia:	http://hdl.handle.net/10361/7462

id	10361-7462
record_format	dspace
spelling	10361-74622017-01-02T10:55:11Z Investigation of CNTFET performance with gate control coefficient effect Khan, Sabbir Ahmed Hasan, Md. Rakibul Mominuzzaman, Sharif Mohammad Department of Computer Science and Engineering, BRAC University CNTFET Drain current Gate control coefficient Transconductance This article was published in Journal of Nano- and Electronic Physics [© 2014 Sumy State University] The article website is at: http://article.sapub.org/10.5923.j.nn.20140402.03.html For the first time, a deep study of gate control coefficient (αG) effect on CNTFET performance has done in this research. A new, analytical CNTFET simulation along with multiple parameter approach has executed with 3D output in MATLAB and that used it to examine device performance. It is found that, drain current and transconductance increases with high gate control coefficient. On the other hand, total capacitance decreases with high αG value resulting improved charging energy. Likewise, drain induced barrier lowering (DIBL) decreases with αG that provides less deviation from ideal device performance. Finally, subthreshold swing comes very close to the theoretical limit at high αG which is desired for low threshold voltage and low-power operation for FETs scaled down to small sizes. Published 2017-01-02T10:53:31Z 2017-01-02T10:53:31Z 2014 Article Khan, S. A., Hasan, M., & Mominuzzaman, S. M. (2014). Investigation of CNTFET performance with gate control coefficient effect. Journal of Nano- and Electronic Physics, 6(2) 20776772 http://hdl.handle.net/10361/7462 en http://article.sapub.org/10.5923.j.nn.20140402.03.html © 2014 Sumy State University
institution	Brac University
collection	Institutional Repository
language	English
topic	CNTFET Drain current Gate control coefficient Transconductance
spellingShingle	CNTFET Drain current Gate control coefficient Transconductance Khan, Sabbir Ahmed Hasan, Md. Rakibul Mominuzzaman, Sharif Mohammad Investigation of CNTFET performance with gate control coefficient effect
description	This article was published in Journal of Nano- and Electronic Physics [© 2014 Sumy State University] The article website is at: http://article.sapub.org/10.5923.j.nn.20140402.03.html
author2	Department of Computer Science and Engineering, BRAC University
author_facet	Department of Computer Science and Engineering, BRAC University Khan, Sabbir Ahmed Hasan, Md. Rakibul Mominuzzaman, Sharif Mohammad
format	Article
author	Khan, Sabbir Ahmed Hasan, Md. Rakibul Mominuzzaman, Sharif Mohammad
author_sort	Khan, Sabbir Ahmed
title	Investigation of CNTFET performance with gate control coefficient effect
title_short	Investigation of CNTFET performance with gate control coefficient effect
title_full	Investigation of CNTFET performance with gate control coefficient effect
title_fullStr	Investigation of CNTFET performance with gate control coefficient effect
title_full_unstemmed	Investigation of CNTFET performance with gate control coefficient effect
title_sort	investigation of cntfet performance with gate control coefficient effect
publisher	© 2014 Sumy State University
publishDate	2017
url	http://hdl.handle.net/10361/7462
work_keys_str_mv	AT khansabbirahmed investigationofcntfetperformancewithgatecontrolcoefficienteffect AT hasanmdrakibul investigationofcntfetperformancewithgatecontrolcoefficienteffect AT mominuzzamansharifmohammad investigationofcntfetperformancewithgatecontrolcoefficienteffect
_version_	1814309406762860544

Investigation of CNTFET performance with gate control coefficient effect

Ítems similars