Mixed FBB and RBB low leakage technique for high durable CMOS circuit

Mixed FBB and RBB low leakage technique for high durable CMOS circuit

This conference paper was presented in the 2014 International Conference on Informatics, Electronics and Vision, ICIEV 2014; Dhaka; Bangladesh; 23 May 2014 through 24 May 2014 [© 2014 IEEE Computer Society] The conference paper's definite version is available at: http://10.1109/ICIEV.2014.6850...

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Chi tiết về thư mục
Những tác giả chính: Barua, Parag, Jafar, Imran Bin, Sengupta, Prianka, Noor, Md Sadaf
Tác giả khác: Department of Electrical and Electronic Engineering
Định dạng: Conference Paper
Ngôn ngữ:English
Được phát hành: © 2014 IEEE Computer Society 2016
Những chủ đề:
BB-Back Bias
CMOS Circuits
FBB-Forward Back Bias
Gate leakage
Leakage current
Low leakage
Low Power VLSI
RBBReverse Back Bias
Tunneling current
Truy cập trực tuyến:http://hdl.handle.net/10361/7035

Internet

http://hdl.handle.net/10361/7035

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