Current-voltage characteristics of ballistic schottky barrier GNRFET and CNTFET: effect of relative dielectric constant

Current-voltage characteristics of ballistic schottky barrier GNRFET and CNTFET: effect of relative dielectric constant

This conference paper was presented in the 10th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2015; Xi'an; China; 7 April 2015 through 11 April 2015 [© 2015 Institute of Electrical and Electronics Engineers Inc.] The conference paper's definite version...

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Dades bibliogràfiques
Autors principals:	Ahmed, Sheikh Ziauddin, Shawkat, Mashiyat Sumaiya, Chowdhury, Md Iramul Hoque, Mominuzzaman, Sharif Mohammad
Altres autors:	Department of Electrical and Electronic Engineering
Format:	Conference Paper
Idioma:	English
Publicat:	© 2015 Institute of Electrical and Electronics Engineers Inc. 2016
Matèries:	CNTFET GNRFET Graphene nanoribbon Carbon nanoribbon
Accés en línia:	http://hdl.handle.net/10361/7007

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