Current-voltage characteristics of ballistic schottky barrier GNRFET and CNTFET: effect of relative dielectric constant

This conference paper was presented in the 10th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2015; Xi'an; China; 7 April 2015 through 11 April 2015 [© 2015 Institute of Electrical and Electronics Engineers Inc.] The conference paper's definite version...

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Prif Awduron:	Ahmed, Sheikh Ziauddin, Shawkat, Mashiyat Sumaiya, Chowdhury, Md Iramul Hoque, Mominuzzaman, Sharif Mohammad
Awduron Eraill:	Department of Electrical and Electronic Engineering
Fformat:	Conference Paper
Iaith:	English
Cyhoeddwyd:	© 2015 Institute of Electrical and Electronics Engineers Inc. 2016
Pynciau:	CNTFET GNRFET Graphene nanoribbon Carbon nanoribbon
Mynediad Ar-lein:	http://hdl.handle.net/10361/7007

id	10361-7007
record_format	dspace
spelling	10361-70072016-11-28T08:15:58Z Current-voltage characteristics of ballistic schottky barrier GNRFET and CNTFET: effect of relative dielectric constant Ahmed, Sheikh Ziauddin Shawkat, Mashiyat Sumaiya Chowdhury, Md Iramul Hoque Mominuzzaman, Sharif Mohammad Department of Electrical and Electronic Engineering CNTFET GNRFET Graphene nanoribbon Carbon nanoribbon This conference paper was presented in the 10th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2015; Xi'an; China; 7 April 2015 through 11 April 2015 [© 2015 Institute of Electrical and Electronics Engineers Inc.] The conference paper's definite version is available at: http://10.1109/NEMS.2015.7147449 Graphene Nanoribbon (GNR) and Carbon Nanotube (CNT) are currently being considered as two of the most promising options to replace silicon technology. Silicon technology is faced with scaling limits and other material issues which hinder the development of transistor technology. In this paper, the effect of relative dielectric constant on the performances of ballistic schottky barrier Graphene Nanoribbon field-effect transistor (GNRFET) and Carbon Nanotube field-effect transistor (CNTFET) is studied and a comparative analysis between the two transistors is provided. It has been observed that using a gate material with higher relative dielectric constant leads to a higher on-state drain current for both the transistors. However, CNTFET has higher on-state drain current compared to GNRFET. Also in this literature, the on and off-state current ratios of both the transistors are calculated and plotted to further differentiate between the performances of GNRFET and CNTFET. Published 2016-11-28T08:13:33Z 2016-11-28T08:13:33Z 2015 Conference Paper Ziauddin Ahmed, S., Shawkat, M. S., Chowdhury, M. I. H., & Mominuzzaman, S. M. (2015). Current-voltage characteristics of ballistic schottky barrier GNRFET and CNTFET: Effect of relative dielectric constant. Paper presented at the 2015 IEEE 10th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2015, 384-387. doi:10.1109/NEMS.2015.7147449 978-146736695-3 http://hdl.handle.net/10361/7007 10.1109/NEMS.2015.7147449 en http://ieeexplore.ieee.org/document/7147449/ © 2015 Institute of Electrical and Electronics Engineers Inc.
institution	Brac University
collection	Institutional Repository
language	English
topic	CNTFET GNRFET Graphene nanoribbon Carbon nanoribbon
spellingShingle	CNTFET GNRFET Graphene nanoribbon Carbon nanoribbon Ahmed, Sheikh Ziauddin Shawkat, Mashiyat Sumaiya Chowdhury, Md Iramul Hoque Mominuzzaman, Sharif Mohammad Current-voltage characteristics of ballistic schottky barrier GNRFET and CNTFET: effect of relative dielectric constant
description	This conference paper was presented in the 10th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2015; Xi'an; China; 7 April 2015 through 11 April 2015 [© 2015 Institute of Electrical and Electronics Engineers Inc.] The conference paper's definite version is available at: http://10.1109/NEMS.2015.7147449
author2	Department of Electrical and Electronic Engineering
author_facet	Department of Electrical and Electronic Engineering Ahmed, Sheikh Ziauddin Shawkat, Mashiyat Sumaiya Chowdhury, Md Iramul Hoque Mominuzzaman, Sharif Mohammad
format	Conference Paper
author	Ahmed, Sheikh Ziauddin Shawkat, Mashiyat Sumaiya Chowdhury, Md Iramul Hoque Mominuzzaman, Sharif Mohammad
author_sort	Ahmed, Sheikh Ziauddin
title	Current-voltage characteristics of ballistic schottky barrier GNRFET and CNTFET: effect of relative dielectric constant
title_short	Current-voltage characteristics of ballistic schottky barrier GNRFET and CNTFET: effect of relative dielectric constant
title_full	Current-voltage characteristics of ballistic schottky barrier GNRFET and CNTFET: effect of relative dielectric constant
title_fullStr	Current-voltage characteristics of ballistic schottky barrier GNRFET and CNTFET: effect of relative dielectric constant
title_full_unstemmed	Current-voltage characteristics of ballistic schottky barrier GNRFET and CNTFET: effect of relative dielectric constant
title_sort	current-voltage characteristics of ballistic schottky barrier gnrfet and cntfet: effect of relative dielectric constant
publisher	© 2015 Institute of Electrical and Electronics Engineers Inc.
publishDate	2016
url	http://hdl.handle.net/10361/7007
work_keys_str_mv	AT ahmedsheikhziauddin currentvoltagecharacteristicsofballisticschottkybarriergnrfetandcntfeteffectofrelativedielectricconstant AT shawkatmashiyatsumaiya currentvoltagecharacteristicsofballisticschottkybarriergnrfetandcntfeteffectofrelativedielectricconstant AT chowdhurymdiramulhoque currentvoltagecharacteristicsofballisticschottkybarriergnrfetandcntfeteffectofrelativedielectricconstant AT mominuzzamansharifmohammad currentvoltagecharacteristicsofballisticschottkybarriergnrfetandcntfeteffectofrelativedielectricconstant
_version_	1814308523131011072

Current-voltage characteristics of ballistic schottky barrier GNRFET and CNTFET: effect of relative dielectric constant

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