Quantum capacitance in strained armchair Graphene nanoribbon considering Edge effect
This conference paper was presented in the 1st IEEE International Conference on Electrical, Computer and Communication Technologies, ICECCT 2015; SVS College of EngineeringCoimbatore; India; 5 March 2015 through 7 March 2015 [© 2015 Institute of Electrical and Electronics Engineers Inc.] The confere...
Автори: | Mondol, Raktim Kumar, Hassan, Asif S., Hasan, Rifat |
---|---|
Інші автори: | Department of Electrical and Electronic Engineering |
Формат: | Conference Paper |
Мова: | English |
Опубліковано: |
© 2015 Institute of Electrical and Electronics Engineers Inc.
2016
|
Предмети: | |
Онлайн доступ: | http://hdl.handle.net/10361/6973 |
Схожі ресурси
-
Bandstru cture observation of graphene nanoribb on and boron-nitride nanoribbon embedded graphene nanoribbon
за авторством: Haque, Fatin Farhan, та інші
Опубліковано: (2016) -
Comparative study of quantum mechanical Capacitance Voltage characteristics and threshold voltage of two different structures of Junction Less Nanowire Transistor
за авторством: Tasneem, Nujhat, та інші
Опубліковано: (2017) -
Simulation of carrier mobility through Graphene Nanoribbon based DNA sensor
за авторством: Hasan, Rifat, та інші
Опубліковано: (2016) -
Comparison of the performance of ballistic schottky barrier graphene nanoribbon FET
за авторством: Ahmed, Sheikh Ziauddin, та інші
Опубліковано: (2014) -
Double quantum well resonant tunneling negative differential resistance device design using graphene nanoribbons
за авторством: Saha, Gobinda, та інші
Опубліковано: (2016)