Quantum capacitance in strained armchair Graphene nanoribbon considering Edge effect

This conference paper was presented in the 1st IEEE International Conference on Electrical, Computer and Communication Technologies, ICECCT 2015; SVS College of EngineeringCoimbatore; India; 5 March 2015 through 7 March 2015 [© 2015 Institute of Electrical and Electronics Engineers Inc.] The confere...

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Hlavní autoři:	Mondol, Raktim Kumar, Hassan, Asif S., Hasan, Rifat
Další autoři:	Department of Electrical and Electronic Engineering
Médium:	Conference Paper
Jazyk:	English
Vydáno:	© 2015 Institute of Electrical and Electronics Engineers Inc. 2016
Témata:	Bandgap Classical capacitance Edge effect Gate delay Graphene nanoribbon Quantum capacitance Strain
On-line přístup:	http://hdl.handle.net/10361/6973

id	10361-6973
record_format	dspace
spelling	10361-69732016-11-24T09:53:28Z Quantum capacitance in strained armchair Graphene nanoribbon considering Edge effect Mondol, Raktim Kumar Hassan, Asif S. Hasan, Rifat Department of Electrical and Electronic Engineering Bandgap Classical capacitance Edge effect Gate delay Graphene nanoribbon Quantum capacitance Strain This conference paper was presented in the 1st IEEE International Conference on Electrical, Computer and Communication Technologies, ICECCT 2015; SVS College of EngineeringCoimbatore; India; 5 March 2015 through 7 March 2015 [© 2015 Institute of Electrical and Electronics Engineers Inc.] The conference paper's definite version is available at: http://10.1109/ICECCT.2015.7225950 Armchair Graphene nanoribbons(A-GNRs) are now widely used in nanoscale transistor because of its semiconducting behavior and fast switching speed. The most important parameter which impedes carrier movement through the channel is 'capacitance' after its sustainable value. Earlier classical capacitance was assumed as only one of the capacitance in nanoscale transistor. But when the device is operated by a source; classical capacitance goes in vain for overall observing the carrier statistics. Here another capacitance must be considered which 'Quantum capacitance' is. Edge effect which is caused during fabrication for the deviation of true structure. In previous literature, it is quantum capacitance calculated by considering edge effect only.But another phenomena is also appeared when GNR is subjected to a considerable strain in fabrication. In this paper we will calculate bandgap, energy , quantum capacitance and gate delay by considering strained A-GNR for corresponding source voltage. 2016-11-24T09:50:58Z 2016-11-24T09:50:58Z 2015 Conference Paper Mondol, R. K., Hassan, A., & Hasan, R. (2015). Quantum capacitance in strained armchair graphene nanoribbon considering edge effect. Paper presented at the Proceedings of 2015 IEEE International Conference on Electrical, Computer and Communication Technologies, ICECCT 2015, doi:10.1109/ICECCT.2015.7225950 978-147996084-2 http://hdl.handle.net/10361/6973 10.1109/ICECCT.2015.7225950 en © 2015 Institute of Electrical and Electronics Engineers Inc.
institution	Brac University
collection	Institutional Repository
language	English
topic	Bandgap Classical capacitance Edge effect Gate delay Graphene nanoribbon Quantum capacitance Strain
spellingShingle	Bandgap Classical capacitance Edge effect Gate delay Graphene nanoribbon Quantum capacitance Strain Mondol, Raktim Kumar Hassan, Asif S. Hasan, Rifat Quantum capacitance in strained armchair Graphene nanoribbon considering Edge effect
description	This conference paper was presented in the 1st IEEE International Conference on Electrical, Computer and Communication Technologies, ICECCT 2015; SVS College of EngineeringCoimbatore; India; 5 March 2015 through 7 March 2015 [© 2015 Institute of Electrical and Electronics Engineers Inc.] The conference paper's definite version is available at: http://10.1109/ICECCT.2015.7225950
author2	Department of Electrical and Electronic Engineering
author_facet	Department of Electrical and Electronic Engineering Mondol, Raktim Kumar Hassan, Asif S. Hasan, Rifat
format	Conference Paper
author	Mondol, Raktim Kumar Hassan, Asif S. Hasan, Rifat
author_sort	Mondol, Raktim Kumar
title	Quantum capacitance in strained armchair Graphene nanoribbon considering Edge effect
title_short	Quantum capacitance in strained armchair Graphene nanoribbon considering Edge effect
title_full	Quantum capacitance in strained armchair Graphene nanoribbon considering Edge effect
title_fullStr	Quantum capacitance in strained armchair Graphene nanoribbon considering Edge effect
title_full_unstemmed	Quantum capacitance in strained armchair Graphene nanoribbon considering Edge effect
title_sort	quantum capacitance in strained armchair graphene nanoribbon considering edge effect
publisher	© 2015 Institute of Electrical and Electronics Engineers Inc.
publishDate	2016
url	http://hdl.handle.net/10361/6973
work_keys_str_mv	AT mondolraktimkumar quantumcapacitanceinstrainedarmchairgraphenenanoribbonconsideringedgeeffect AT hassanasifs quantumcapacitanceinstrainedarmchairgraphenenanoribbonconsideringedgeeffect AT hasanrifat quantumcapacitanceinstrainedarmchairgraphenenanoribbonconsideringedgeeffect
_version_	1814307973019729920

Quantum capacitance in strained armchair Graphene nanoribbon considering Edge effect

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