Quantum capacitance in strained armchair Graphene nanoribbon considering Edge effect

Quantum capacitance in strained armchair Graphene nanoribbon considering Edge effect

This conference paper was presented in the 1st IEEE International Conference on Electrical, Computer and Communication Technologies, ICECCT 2015; SVS College of EngineeringCoimbatore; India; 5 March 2015 through 7 March 2015 [© 2015 Institute of Electrical and Electronics Engineers Inc.] The confere...

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Détails bibliographiques
Auteurs principaux: Mondol, Raktim Kumar, Hassan, Asif S., Hasan, Rifat
Autres auteurs: Department of Electrical and Electronic Engineering
Format: Conference Paper
Langue:English
Publié: © 2015 Institute of Electrical and Electronics Engineers Inc. 2016
Sujets:
Bandgap
Classical capacitance
Edge effect
Gate delay
Graphene nanoribbon
Quantum capacitance
Strain
Accès en ligne:http://hdl.handle.net/10361/6973
Description
Résumé:This conference paper was presented in the 1st IEEE International Conference on Electrical, Computer and Communication Technologies, ICECCT 2015; SVS College of EngineeringCoimbatore; India; 5 March 2015 through 7 March 2015 [© 2015 Institute of Electrical and Electronics Engineers Inc.] The conference paper's definite version is available at: http://10.1109/ICECCT.2015.7225950

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