Double quantum well resonant tunneling negative differential resistance device design using graphene nanoribbons
This conference paper was presented in the 15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015; Rome; Italy; 27 July 2015 through 30 July 2015 [© 2015 Institute of Electrical and Electronics Engineers Inc.] The conference paper's definite version is available at: http://10.1109...
Автори: | Saha, Gobinda, Saha, Atanukumar, Harun-Ur Rashid, A.B.M. |
---|---|
Інші автори: | Department of Electrical and Electronic Engineering |
Формат: | Conference Paper |
Мова: | English |
Опубліковано: |
© 2015 Institute of Electrical and Electronics Engineers Inc.
2016
|
Предмети: | |
Онлайн доступ: | http://hdl.handle.net/10361/6943 |
Схожі ресурси
-
I-V characteristics observation of graphene boron nitride vertical heterojunction van der waals resonant tunneling diode
за авторством: Ahmed, Saber, та інші
Опубліковано: (2016) -
Bandstru cture observation of graphene nanoribb on and boron-nitride nanoribbon embedded graphene nanoribbon
за авторством: Haque, Fatin Farhan, та інші
Опубліковано: (2016) -
Humidity sensor using surface adsorbed channel modulated Graphene nanoribbon: NEGF approach
за авторством: Shakil, Shifur Rahman, та інші
Опубліковано: (2017) -
Comparison of the performance of ballistic schottky barrier graphene nanoribbon FET
за авторством: Ahmed, Sheikh Ziauddin, та інші
Опубліковано: (2014) -
Simulation of carrier mobility through Graphene Nanoribbon based DNA sensor
за авторством: Hasan, Rifat, та інші
Опубліковано: (2016)