I-V characteristics observation of graphene boron nitride vertical heterojunction van der waals resonant tunneling diode

I-V characteristics observation of graphene boron nitride vertical heterojunction van der waals resonant tunneling diode

This thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2016.

Chi tiết về thư mục
Những tác giả chính:	Ahmed, Saber, Sobhan, Rifat Binte
Tác giả khác:	Saha, Atanu Kumar
Định dạng:	Luận văn
Ngôn ngữ:	English
Được phát hành:	BRAC University 2016
Những chủ đề:	I-V Characteristics Negative Differential Resistance (NDR) Resonant Tunneling Diodes (RTD)
Truy cập trực tuyến:	http://hdl.handle.net/10361/6425

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