I-V characteristics observation of graphene boron nitride vertical heterojunction van der waals resonant tunneling diode

I-V characteristics observation of graphene boron nitride vertical heterojunction van der waals resonant tunneling diode

This thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2016.

Библиографические подробности
Главные авторы:	Ahmed, Saber, Sobhan, Rifat Binte
Другие авторы:	Saha, Atanu Kumar
Формат:	Диссертация
Язык:	English
Опубликовано:	BRAC University 2016
Предметы:	I-V Characteristics Negative Differential Resistance (NDR) Resonant Tunneling Diodes (RTD)
Online-ссылка:	http://hdl.handle.net/10361/6425

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