I-V characteristics observation of graphene boron nitride vertical heterojunction van der waals resonant tunneling diode
This thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2016.
Main Authors: | Ahmed, Saber, Sobhan, Rifat Binte |
---|---|
Outros Autores: | Saha, Atanu Kumar |
Formato: | Thesis |
Idioma: | English |
Publicado em: |
BRAC University
2016
|
Assuntos: | |
Acesso em linha: | http://hdl.handle.net/10361/6425 |
Registos relacionados
-
Double quantum well resonant tunneling negative differential resistance device design using graphene nanoribbons
Por: Saha, Gobinda, et al.
Publicado em: (2016) -
Principles of electron tunneling spectroscopy
Por: Wolf, E. L. -
Bandstru cture observation of graphene nanoribb on and boron-nitride nanoribbon embedded graphene nanoribbon
Por: Haque, Fatin Farhan, et al.
Publicado em: (2016) -
The PN junction diode. Volume II /
Por: Neudeck, Gerold W.
Publicado em: (1989) -
Construction of laser raman system using diode laser and Its performance
Por: Abedin, Kazi M, et al.
Publicado em: (2017)