I-V characteristics observation of graphene boron nitride vertical heterojunction van der waals resonant tunneling diode

I-V characteristics observation of graphene boron nitride vertical heterojunction van der waals resonant tunneling diode

This thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2016.

Bibliografische gegevens
Hoofdauteurs:	Ahmed, Saber, Sobhan, Rifat Binte
Andere auteurs:	Saha, Atanu Kumar
Formaat:	Thesis
Taal:	English
Gepubliceerd in:	BRAC University 2016
Onderwerpen:	I-V Characteristics Negative Differential Resistance (NDR) Resonant Tunneling Diodes (RTD)
Online toegang:	http://hdl.handle.net/10361/6425

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