I-V characteristics observation of graphene boron nitride vertical heterojunction van der waals resonant tunneling diode

I-V characteristics observation of graphene boron nitride vertical heterojunction van der waals resonant tunneling diode

This thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2016.

Dettagli Bibliografici
Autori principali:	Ahmed, Saber, Sobhan, Rifat Binte
Altri autori:	Saha, Atanu Kumar
Natura:	Tesi
Lingua:	English
Pubblicazione:	BRAC University 2016
Soggetti:	I-V Characteristics Negative Differential Resistance (NDR) Resonant Tunneling Diodes (RTD)
Accesso online:	http://hdl.handle.net/10361/6425

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