I-V characteristics observation of graphene boron nitride vertical heterojunction van der waals resonant tunneling diode

I-V characteristics observation of graphene boron nitride vertical heterojunction van der waals resonant tunneling diode

This thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2016.

Xehetasun bibliografikoak
Egile Nagusiak:	Ahmed, Saber, Sobhan, Rifat Binte
Beste egile batzuk:	Saha, Atanu Kumar
Formatua:	Thesis
Hizkuntza:	English
Argitaratua:	BRAC University 2016
Gaiak:	I-V Characteristics Negative Differential Resistance (NDR) Resonant Tunneling Diodes (RTD)
Sarrera elektronikoa:	http://hdl.handle.net/10361/6425

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