I-V characteristics observation of graphene boron nitride vertical heterojunction van der waals resonant tunneling diode
This thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2016.
| المؤلفون الرئيسيون: | , |
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| مؤلفون آخرون: | |
| التنسيق: | أطروحة |
| اللغة: | English |
| منشور في: |
BRAC University
2016
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| الموضوعات: | |
| الوصول للمادة أونلاين: | http://hdl.handle.net/10361/6425 |
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10361-6425 |
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10361-64252019-09-30T03:02:26Z I-V characteristics observation of graphene boron nitride vertical heterojunction van der waals resonant tunneling diode Ahmed, Saber Sobhan, Rifat Binte Saha, Atanu Kumar Department of Electrical and Electronic Engineering, BRAC University I-V Characteristics Negative Differential Resistance (NDR) Resonant Tunneling Diodes (RTD) This thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2016. Cataloged from PDF version of thesis report. Includes bibliographical references (page 46-47). In this paper, we are going to observe the band structure and I-V characteristics of Graphene Boron Nitride Vertical Heterojunction Van der Waals Resonant Tunneling Diode. Furthermore, showing negative differential resistance (NDR) characteristics which is a very important features and advantage of resonant tunneling diodes (RTD). Saber Ahmed Rifat Binte Sobhan B. Electrical and Electronic Engineering 2016-09-20T06:59:09Z 2016-09-20T06:59:09Z 2016 2016-08-17 Thesis ID 13121044 ID 13121126 http://hdl.handle.net/10361/6425 en BRAC University thesis are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. 47 pages application/pdf BRAC University |
| institution |
Brac University |
| collection |
Institutional Repository |
| language |
English |
| topic |
I-V Characteristics Negative Differential Resistance (NDR) Resonant Tunneling Diodes (RTD) |
| spellingShingle |
I-V Characteristics Negative Differential Resistance (NDR) Resonant Tunneling Diodes (RTD) Ahmed, Saber Sobhan, Rifat Binte I-V characteristics observation of graphene boron nitride vertical heterojunction van der waals resonant tunneling diode |
| description |
This thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2016. |
| author2 |
Saha, Atanu Kumar |
| author_facet |
Saha, Atanu Kumar Ahmed, Saber Sobhan, Rifat Binte |
| format |
Thesis |
| author |
Ahmed, Saber Sobhan, Rifat Binte |
| author_sort |
Ahmed, Saber |
| title |
I-V characteristics observation of graphene boron nitride vertical heterojunction van der waals resonant tunneling diode |
| title_short |
I-V characteristics observation of graphene boron nitride vertical heterojunction van der waals resonant tunneling diode |
| title_full |
I-V characteristics observation of graphene boron nitride vertical heterojunction van der waals resonant tunneling diode |
| title_fullStr |
I-V characteristics observation of graphene boron nitride vertical heterojunction van der waals resonant tunneling diode |
| title_full_unstemmed |
I-V characteristics observation of graphene boron nitride vertical heterojunction van der waals resonant tunneling diode |
| title_sort |
i-v characteristics observation of graphene boron nitride vertical heterojunction van der waals resonant tunneling diode |
| publisher |
BRAC University |
| publishDate |
2016 |
| url |
http://hdl.handle.net/10361/6425 |
| work_keys_str_mv |
AT ahmedsaber ivcharacteristicsobservationofgrapheneboronnitrideverticalheterojunctionvanderwaalsresonanttunnelingdiode AT sobhanrifatbinte ivcharacteristicsobservationofgrapheneboronnitrideverticalheterojunctionvanderwaalsresonanttunnelingdiode |
| _version_ |
1814309682679906304 |