Time-independent schrodinger-poisson coupled simulation based study of InP and InAlAs quantum well field effect transistors
This thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2016.
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BRAC University
2016
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| Accesso online: | http://hdl.handle.net/10361/6401 |
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10361-6401 |
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10361-64012019-09-30T03:14:55Z Time-independent schrodinger-poisson coupled simulation based study of InP and InAlAs quantum well field effect transistors Ahsan, Mehdi Hayat, Abrar Nath, Apurba Bhuian, Dr. Mohammed Belal Hossain Saha, Atanu Kumar Department of Electrical and Electronic Engineering, BRAC University InP InAlAs Schrödinger equation This thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2016. Cataloged from PDF version of thesis report. Includes bibliographical references (page 46-47). The electronics industry first started appreciating QWFETs over MOSFETs back in late 2011 due the QWFET’s unique wrapped gate around channel structure, which provided better control over threshold voltage and reduced operating voltage. Our main purpose was to observe the changes in the gate capacitance of QWFETS with InP as the upper barrier compared to InAlAs as the upper barrier. So we devised a Schrodinger-Poisson coupled simulation in COMSOL® Multiphysics®. The Poisson Equation in our simulation was used to determine the conduction band profiles across the geometry and the Schrodinger Equation was used to find the corresponding probability densities of electrons. We performed the above experiments in both doped and undoped conditions with both InP and InAlAs as upper barriers with increasing gate voltages to see the changes. At the end, we could infer that devices with doped variants of both InP and InAlAs as the upper barrier had better yields of gate capacitance than the undoped materials themselves and more importantly doped InAlAs as the upper barrier had much better yields of capacitance than doped InP as the upper barrier. Mehdi Ahsan Abrar Hayat Apurba Nath B. Electrical and Electronic Engineering 2016-09-18T08:09:15Z 2016-09-18T08:09:15Z 2016 2016 Thesis ID 13121029 ID 13121039 ID 13121110 http://hdl.handle.net/10361/6401 en BRAC University thesis are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. 47 pages application/pdf BRAC University |
| institution |
Brac University |
| collection |
Institutional Repository |
| language |
English |
| topic |
InP InAlAs Schrödinger equation |
| spellingShingle |
InP InAlAs Schrödinger equation Ahsan, Mehdi Hayat, Abrar Nath, Apurba Time-independent schrodinger-poisson coupled simulation based study of InP and InAlAs quantum well field effect transistors |
| description |
This thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2016. |
| author2 |
Bhuian, Dr. Mohammed Belal Hossain |
| author_facet |
Bhuian, Dr. Mohammed Belal Hossain Ahsan, Mehdi Hayat, Abrar Nath, Apurba |
| format |
Thesis |
| author |
Ahsan, Mehdi Hayat, Abrar Nath, Apurba |
| author_sort |
Ahsan, Mehdi |
| title |
Time-independent schrodinger-poisson coupled simulation based study of InP and InAlAs quantum well field effect transistors |
| title_short |
Time-independent schrodinger-poisson coupled simulation based study of InP and InAlAs quantum well field effect transistors |
| title_full |
Time-independent schrodinger-poisson coupled simulation based study of InP and InAlAs quantum well field effect transistors |
| title_fullStr |
Time-independent schrodinger-poisson coupled simulation based study of InP and InAlAs quantum well field effect transistors |
| title_full_unstemmed |
Time-independent schrodinger-poisson coupled simulation based study of InP and InAlAs quantum well field effect transistors |
| title_sort |
time-independent schrodinger-poisson coupled simulation based study of inp and inalas quantum well field effect transistors |
| publisher |
BRAC University |
| publishDate |
2016 |
| url |
http://hdl.handle.net/10361/6401 |
| work_keys_str_mv |
AT ahsanmehdi timeindependentschrodingerpoissoncoupledsimulationbasedstudyofinpandinalasquantumwellfieldeffecttransistors AT hayatabrar timeindependentschrodingerpoissoncoupledsimulationbasedstudyofinpandinalasquantumwellfieldeffecttransistors AT nathapurba timeindependentschrodingerpoissoncoupledsimulationbasedstudyofinpandinalasquantumwellfieldeffecttransistors |
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