Simulation of electronic properties of a quantum dot in transistor geometry at varying temperatures

This internship report is submitted in a partial fulfillment of the requirements for the degree of Bachelor of Science in Physics, 2016

Bibliografske podrobnosti
Glavni avtor: Ahsan, Md. Galib
Drugi avtorji: Haque, Md. Firoze H.
Format: Thesis
Jezik:English
Izdano: BRAC University 2016
Teme:
Online dostop:http://hdl.handle.net/10361/5431