Simulation of electronic properties of a quantum dot in transistor geometry at varying temperatures
This internship report is submitted in a partial fulfillment of the requirements for the degree of Bachelor of Science in Physics, 2016
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| Formato: | Thesis |
| Idioma: | English |
| Publicado em: |
BRAC University
2016
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| Acesso em linha: | http://hdl.handle.net/10361/5431 |