Simulation of electronic properties of a quantum dot in transistor geometry at varying temperatures
This internship report is submitted in a partial fulfillment of the requirements for the degree of Bachelor of Science in Physics, 2016
| Autore principale: | |
|---|---|
| Altri autori: | |
| Natura: | Tesi |
| Lingua: | English |
| Pubblicazione: |
BRAC University
2016
|
| Soggetti: | |
| Accesso online: | http://hdl.handle.net/10361/5431 |