Simulation of electronic properties of a quantum dot in transistor geometry at varying temperatures

This internship report is submitted in a partial fulfillment of the requirements for the degree of Bachelor of Science in Physics, 2016

Bibliografski detalji
Glavni autor: Ahsan, Md. Galib
Daljnji autori: Haque, Md. Firoze H.
Format: Disertacija
Jezik:English
Izdano: BRAC University 2016
Teme:
Online pristup:http://hdl.handle.net/10361/5431