Simulation of electronic properties of a quantum dot in transistor geometry at varying temperatures
This internship report is submitted in a partial fulfillment of the requirements for the degree of Bachelor of Science in Physics, 2016
| Autor Principal: | |
|---|---|
| Outros autores: | |
| Formato: | Thesis |
| Idioma: | English |
| Publicado: |
BRAC University
2016
|
| Subjects: | |
| Acceso en liña: | http://hdl.handle.net/10361/5431 |