Simulation of electronic properties of a quantum dot in transistor geometry at varying temperatures

This internship report is submitted in a partial fulfillment of the requirements for the degree of Bachelor of Science in Physics, 2016

Sonraí bibleagrafaíochta
Príomhchruthaitheoir: Ahsan, Md. Galib
Rannpháirtithe: Haque, Md. Firoze H.
Formáid: Tráchtas
Teanga:English
Foilsithe / Cruthaithe: BRAC University 2016
Ábhair:
Rochtain ar líne:http://hdl.handle.net/10361/5431