Simulation of electronic properties of a quantum dot in transistor geometry at varying temperatures

This internship report is submitted in a partial fulfillment of the requirements for the degree of Bachelor of Science in Physics, 2016

Détails bibliographiques
Auteur principal: Ahsan, Md. Galib
Autres auteurs: Haque, Md. Firoze H.
Format: Thèse
Langue:English
Publié: BRAC University 2016
Sujets:
Accès en ligne:http://hdl.handle.net/10361/5431