Simulation of electronic properties of a quantum dot in transistor geometry at varying temperatures

This internship report is submitted in a partial fulfillment of the requirements for the degree of Bachelor of Science in Physics, 2016

Xehetasun bibliografikoak
Egile nagusia: Ahsan, Md. Galib
Beste egile batzuk: Haque, Md. Firoze H.
Formatua: Thesis
Hizkuntza:English
Argitaratua: BRAC University 2016
Gaiak:
Sarrera elektronikoa:http://hdl.handle.net/10361/5431