Simulation of electronic properties of a quantum dot in transistor geometry at varying temperatures

This internship report is submitted in a partial fulfillment of the requirements for the degree of Bachelor of Science in Physics, 2016

Detalles Bibliográficos
Autor principal: Ahsan, Md. Galib
Otros Autores: Haque, Md. Firoze H.
Formato: Tesis
Lenguaje:English
Publicado: BRAC University 2016
Materias:
Acceso en línea:http://hdl.handle.net/10361/5431