Simulation of electronic properties of a quantum dot in transistor geometry at varying temperatures

This internship report is submitted in a partial fulfillment of the requirements for the degree of Bachelor of Science in Physics, 2016

Manylion Llyfryddiaeth
Prif Awdur: Ahsan, Md. Galib
Awduron Eraill: Haque, Md. Firoze H.
Fformat: Traethawd Ymchwil
Iaith:English
Cyhoeddwyd: BRAC University 2016
Pynciau:
Mynediad Ar-lein:http://hdl.handle.net/10361/5431