Simulation of electronic properties of a quantum dot in transistor geometry at varying temperatures
This internship report is submitted in a partial fulfillment of the requirements for the degree of Bachelor of Science in Physics, 2016
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| Lingua: | English |
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BRAC University
2016
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| Accesso online: | http://hdl.handle.net/10361/5431 |
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10361-54312019-09-30T03:00:36Z Simulation of electronic properties of a quantum dot in transistor geometry at varying temperatures Ahsan, Md. Galib Haque, Md. Firoze H. Department of Mathematics and Natural Sciences, BRAC University Physics Simulation This internship report is submitted in a partial fulfillment of the requirements for the degree of Bachelor of Science in Physics, 2016 Cataloged from PDF version of internship report. Includes bibliographical references (page 58-59). Electrical conduction is the ow of electron due to a force applied by an electric eld. In bulk material, conduction process obeys Ohm's law. The law states that current is proportional to applied voltage. But nano-sized objects behave di erently. At these range quantum e ects modify the electronic conduction properties and exhibit a staircase-like conduction. This is also known as Coulomb staircase. In our work, electronic properties of a quantum dot was investigated in transistor geometry. As a device a simpli ed Single Electron Transistors (SET's) model has been considered, which is made of a quantum dot connected through two tunneling junctions to a source and a drain electrode, and capacitively coupled to a gate electrode. Single-Electron Transistors are often discussed as elements of nanometer scale electronic circuits because they can be made very small and they can detect the motion of individual electrons. A Python program has been developed based on rate equations and IvsV characteristic graph as a function of temperature has been obtained using numerical calculation. Then radius of the quantum dot has been determined at a temperature when the QD is shifted away form quantum regime and falls into classical regime. Md. Galib Ahsan B. Science in Physics 2016-06-02T11:06:25Z 2016-06-02T11:06:25Z 2016 2016-03 Thesis ID 06311004 http://hdl.handle.net/10361/5431 en BRAC University Internship reports are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. 59 pages application/pdf BRAC University |
| institution |
Brac University |
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Institutional Repository |
| language |
English |
| topic |
Physics Simulation |
| spellingShingle |
Physics Simulation Ahsan, Md. Galib Simulation of electronic properties of a quantum dot in transistor geometry at varying temperatures |
| description |
This internship report is submitted in a partial fulfillment of the requirements for the degree of Bachelor of Science in Physics, 2016 |
| author2 |
Haque, Md. Firoze H. |
| author_facet |
Haque, Md. Firoze H. Ahsan, Md. Galib |
| format |
Thesis |
| author |
Ahsan, Md. Galib |
| author_sort |
Ahsan, Md. Galib |
| title |
Simulation of electronic properties of a quantum dot in transistor geometry at varying temperatures |
| title_short |
Simulation of electronic properties of a quantum dot in transistor geometry at varying temperatures |
| title_full |
Simulation of electronic properties of a quantum dot in transistor geometry at varying temperatures |
| title_fullStr |
Simulation of electronic properties of a quantum dot in transistor geometry at varying temperatures |
| title_full_unstemmed |
Simulation of electronic properties of a quantum dot in transistor geometry at varying temperatures |
| title_sort |
simulation of electronic properties of a quantum dot in transistor geometry at varying temperatures |
| publisher |
BRAC University |
| publishDate |
2016 |
| url |
http://hdl.handle.net/10361/5431 |
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AT ahsanmdgalib simulationofelectronicpropertiesofaquantumdotintransistorgeometryatvaryingtemperatures |
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1814307460115070976 |