Study of Ballistic Graphene Nanoribbon FET and Carbon Nanotube FET for device applications
This thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2015.
मुख्य लेखक: | Pavel, Md. Reaz Haider |
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अन्य लेखक: | Mominuzzaman, Dr. Sharif Mohammad |
स्वरूप: | थीसिस |
भाषा: | English |
प्रकाशित: |
BRAC University
2016
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विषय: | |
ऑनलाइन पहुंच: | http://hdl.handle.net/10361/4958 |
समान संसाधन
-
Comparison of the performance of ballistic schottky barrier graphene nanoribbon FET
द्वारा: Ahmed, Sheikh Ziauddin, और अन्य
प्रकाशित: (2014) -
Current-Voltage characteristics of carbon Nanotube field effect transistor considering Non-Ballistic conduction
द्वारा: Rouf, Nirjhor Tahmidur, और अन्य
प्रकाशित: (2014) -
Toward Quantum FinFET
प्रकाशित: (2013) -
Characterization of Carbon Nanotube field effect transistor
द्वारा: Khan, Sabbir Ahmed, और अन्य
प्रकाशित: (2013) - Carbon Nanotubes, Graphene, and Associated Devices VII