Study of Ballistic Graphene Nanoribbon FET and Carbon Nanotube FET for device applications
This thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2015.
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10361-49582019-09-30T03:27:59Z Study of Ballistic Graphene Nanoribbon FET and Carbon Nanotube FET for device applications Pavel, Md. Reaz Haider Mominuzzaman, Dr. Sharif Mohammad Department of Electrical and Electronic Engineering, BRAC University Electrical and electronic engineering FET This thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2015. Cataloged from PDF version of thesis report. Includes bibliographical references (page 83-90). The need for technological progression in the field of electronics has been persistently escalating. So far silicon has been the most important fabrication material of preference for meeting the current demands. However, silicon itself has few of its own limitations; Silicon based integrated circuits and the scaling of silicon MOSFET design faces complications like tunneling effect, gate oxide thickness effect etc. which has given the extensive perimeter for new materials with improved characteristics to emerge. In up to date periods, graphene and carbon nanotube have shown huge promise as materials that can swap silicon-based materials in the future due to their outstanding electrical properties and other characteristics. Simulation studies of graphene nanoribbon field-effect transistors (GNRFETs) and carbon nanotube field-effect transistors (CNTFETs) at different contact temperatures are presented in this thesis paper using models that have been methodically developed and are of increasing thoroughness and versatility. This thesis covers the studies and modeling of graphene nanoribbon and carbon nanotube, which includes band structures and current-voltage graphical plots. Also, an analysis has been presented which shows the effect by varying contact temperatures for relative dielectric constant and chirality on the device performance, in particular on the drain current. The purpose of this paper is to the study behaviour of graphene nanoribbon transistors and carbon nanotube transistors. The simulation is carried out using NanoTCAD ViDES program and the main focus is on the changes in the I-V characteristic curves for transfer and output characteristics for relative dielectric constant and chirality for different contact temperatures. The obtained results were used to make a comparative analysis of the device performance of GNRFET and CNTFET. We confirmed our work by contrasting of our results with other recognized academic papers published under the same category. Md. Reaz Haider Pavel Md. Zishan Ibne Hussain A.B.M. Rakibul Ahsan B. Electrical and Electronic Engineering 2016-01-26T15:06:10Z 2016-01-26T15:06:10Z 2015 2015 Thesis ID 11221050 ID 11121055 ID 11221033 http://hdl.handle.net/10361/4958 en BRAC University Internship reports are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. 155 pages application/pdf BRAC University |
| institution |
Brac University |
| collection |
Institutional Repository |
| language |
English |
| topic |
Electrical and electronic engineering FET |
| spellingShingle |
Electrical and electronic engineering FET Pavel, Md. Reaz Haider Study of Ballistic Graphene Nanoribbon FET and Carbon Nanotube FET for device applications |
| description |
This thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2015. |
| author2 |
Mominuzzaman, Dr. Sharif Mohammad |
| author_facet |
Mominuzzaman, Dr. Sharif Mohammad Pavel, Md. Reaz Haider |
| format |
Thesis |
| author |
Pavel, Md. Reaz Haider |
| author_sort |
Pavel, Md. Reaz Haider |
| title |
Study of Ballistic Graphene Nanoribbon FET and Carbon Nanotube FET for device applications |
| title_short |
Study of Ballistic Graphene Nanoribbon FET and Carbon Nanotube FET for device applications |
| title_full |
Study of Ballistic Graphene Nanoribbon FET and Carbon Nanotube FET for device applications |
| title_fullStr |
Study of Ballistic Graphene Nanoribbon FET and Carbon Nanotube FET for device applications |
| title_full_unstemmed |
Study of Ballistic Graphene Nanoribbon FET and Carbon Nanotube FET for device applications |
| title_sort |
study of ballistic graphene nanoribbon fet and carbon nanotube fet for device applications |
| publisher |
BRAC University |
| publishDate |
2016 |
| url |
http://hdl.handle.net/10361/4958 |
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AT pavelmdreazhaider studyofballisticgraphenenanoribbonfetandcarbonnanotubefetfordeviceapplications |
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