Simulation based study of non-planar multigate indium gallium arsenide quantum well field effect transistors
This thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2015.
| Главные авторы: | , , , |
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| Другие авторы: | |
| Формат: | Диссертация |
| Язык: | English |
| Опубликовано: |
BRAC University
2015
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| Предметы: | |
| Online-ссылка: | http://hdl.handle.net/10361/4330 |