Simulation based study of non-planar multigate indium gallium arsenide quantum well field effect transistors

Míreanna comhchosúla

• Simulation of electronic properties of a quantum dot in transistor geometry at varying temperatures
  de réir: Ahsan, Md. Galib
  Foilsithe / Cruthaithe: (2016)
• Optical and Digital Gallium Arsenide Technologies for Signal Processing Applications
• High Mobility and Quantum Well Transistors
  de réir: Hellings
  Foilsithe / Cruthaithe: (2013)
• Simulation based electrostatic study of different multigate quantumwell field effect transistors by changing the gate oxide thickness and metal work function
  de réir: Afsin, Muntasirul Haque, et al.
  Foilsithe / Cruthaithe: (2017)
• Microwave Integrated Circuit Conference (EuMIC), European (Formerly European Gallium Arsenide and Other Semiconductors Application Symposium - EGASS)