Simulation based study of non-planar multigate indium gallium arsenide quantum well field effect transistors

Simulation based study of non-planar multigate indium gallium arsenide quantum well field effect transistors

This thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2015.

Chi tiết về thư mục
Những tác giả chính:	Haque, Tausif Omar, Shifain, Joyoti, Mallick, Protim, Islam, Md. Rizwanul
Tác giả khác:	Bhuian, Dr. Mohammed Belal Hossain
Định dạng:	Luận văn
Ngôn ngữ:	English
Được phát hành:	BRAC University 2015
Những chủ đề:	Electrical and electronic engineering Simulation
Truy cập trực tuyến:	http://hdl.handle.net/10361/4330

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